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Effects of composition and thickness of TiN metal gate on the ...
Sep 1, 2013 · We investigated the effects of gas flow rates during sputtering and thickness of TiN metal gate on the equivalent oxide thickness (EOT) and flat band voltage (V FB) in the gate …
- Author: Seok-Hee Lee, Rino Choi, Changhwan Choi
- Publish Year: 2013
Plasma atomic layer deposited TiN metal gate for three …
Jun 1, 2012 · We evaluated plasma atomic layer deposition (ALD)-based TiN as a gate electrode for the metal–oxide–semiconductor (MOS) devices application by varying thickness, …
- Author: Seung Chan Heo, Changhwan Choi
- Publish Year: 2012
Effects of composition and thickness of TiN metal gate on the ...
Sep 1, 2013 · In this study, we present V FB modulation and EOT scaling by just varying composition and thickness of TiN metal gate in MOS devices, which could pave the way to …
- Author: Seok-Hee Lee, Rino Choi, Changhwan Choi
- Publish Year: 2013
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Metal gate work function tuning by Al incorporation in TiN
Feb 21, 2014 · Titanium nitride (TiN) films have been used as gate electrode on metal-oxide-semiconductor (MOS) devices. TiN effective work function (EWF) values have been often reported as suitable for pMOS. For nMOS devices, a …
Understanding the Role of TiN Barrier Layer on …
Apr 13, 2016 · The role of TiN barrier layer on electrical performance of metal oxide semiconductor (MOS) with Si/SiO 2 /HfO 2 /ALD-TiN/ALD-TiAlC structure is investigated. It is found that the effective workfunction of TiN/TiAlC decreases …
Influence of Oxide Interlayer by TiN Metal Gate in High-k First …
Apr 5, 2017 · In the high-k first metal gate stack, TiN is capped by polysilicon and has to go through high thermal budget processes such as S/D annealing. Interaction between TiN and …
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Modulation of the effective work function of TiN metal gate for …
Aug 1, 2013 · It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si, which can meet the lower threshold voltage requirement of p …
Investigation of the TiN Gate Electrode With Tunable Work …
Abstract: The titanium nitride (TiN) gate electrode with a tunable work function has successfully been deposited on the sidewalls of upstanding Si-fin channels of FinFETs by using a …
Ion-Implanted TiN Metal Gate With Dual Band-Edge Work …
This paper proposed, for the first time, that the dual band-edge effective work functions are achieved by employing a single metal gate (MG) and single high-k (HK) dielectric via ion …
Mechanisms of a Rectifying TiN Gate Contact for AlGaN
Aug 27, 2020 · Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN/GaN based micro and nanometer HEMTs. A high compressive strain occurring in …
Ion-Implanted TiN Metal Gate with Dual Band-Edge …
Nov 10, 2015 · This paper proposes an ion implantation approach for modulating metal gate work function for both n-metal and p-metal gate used in a HiK last and replacement gate process.
Twingate: It's time to ditch your VPN
Eliminate challenging deployments and resource intensive maintenance with software-based ZTNA. Prevent lateral network traffic, eliminate open inbound ports, and implement the …
Atomic layer annealing for modulation of the work function of TiN …
May 30, 2022 · Atomic layer annealing (ALA) is the in-situ Ar plasma treatment in each ALD cycle. The ALA process improves the density and crystallinity of TiN thin films at 300℃. The ALA …
Metal vs. Soft-Seated Gate Valves: Which is Right for You?
1 day ago · Advantages of Metal-Seated Gate Valves. High Temperature Resistance – One of the biggest advantages of metal-seated gate valves is their ability to withstand extreme …
Advanced PVD TiN for Metal Gate Application - IOPscience
Mar 8, 2013 · RFPVD (radio frequency physical vapor deposition) TiN has been developed for metal gate application. This paper presents studies of the film texture, density, and inter …
Lauterbourg Poste 2 Map - Building - Lauterbourg, Grand Est, …
Lauterbourg Poste 2 Lauterbourg Poste 2 is a building in Lauterbourg, Arrondissement of Haguenau, Grand Est.Lauterbourg Poste 2 is situated nearby to the marina Base de voile and …
Comparative study of TaN-TiN and TiN gate stacks for thermally …
TaN-TiN laminate gates show enhanced drives (I D), higher transconductance (G M), higher mobility (mu EFF , and reduced off current (I OFF) characteristics compared to TiN gates. The …
Place des Romains Map - Lauterbourg, Grand Est, France
Place des Romains Place des Romains is in Lauterbourg, Arrondissement of Haguenau, Grand Est.Place des Romains is situated nearby to the social service facility EHPAD de la Lauter and …
Nanoscale TiN metal gate technology for CMOS integration
Apr 1, 2006 · In this work, we focus on the investigation of titanium nitride (TiN) for a nanoscale metal gate electrode process module. The critical steps studied are deposition, nano …
Village - Haguenau-Wissembourg, Grand Est, France - Carte
Lauterbourg est une commune française située dans la circonscription administrative du Bas-Rhin et, depuis le 1er janvier 2021, dans le territoire de la Collectivité européenne d'Alsace, en …
Porte de Landau, Lauterbourg Map - Lauterbourg, Grand Est, …
Porte de Landau, Lauterbourg is a city gate in Lauterbourg, Arrondissement of Haguenau, Grand Est. Porte de Landau, Lauterbourg is situated nearby to Place des Romains and the social …
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